ZXMP10A18K

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) @ Vds: 1055pF @ 50V
Current - Continuous Drain (Id) @ 25° C: 3.8A
Packaging: Cut Tape (CT)
Manufacturer: Diodes Inc
Supplier Device Package: TO-252-3
Power - Max: 2.17W
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.8A, 10V
Gate Charge (Qg) @ Vgs: 26.9nC @ 10V


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package




Application

• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control




Pinout






Specifications

Part Number	ZXMP10A18K
Config/ Polarity	P
PD (W)	10.2
VDSS (V)	-100
VGSS (+/-) (V)	20
ID (A)	-5.9
RDS (on) Max() @ VGS; -3.5V	-
RDS (on) Max() @ VGS; -6V	0.19
RDS (on) Max() @ VGS; -10.0V	0.15
VGS(th) (V)	-4
Ciss (typ) (pF)	1055
Qg (typ) (nC) @ VGS; 10V	26.9

Description

This new generation trench MOSFET ZXMP10A18K from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.