ZXGD3003E6

NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For device with two active dice running at equal power.
(c) Pulse width <=300us limit repetition rate to comply with maximum junction temperature.

The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.The ZXGD3003E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.

Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.