Features: • Extremely low equivalent on-resistance; RSAT = 39mV at 5A• 5.5 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent gain characteristics specified up to 10 AmpsApplication• DC - DC Converters• MOSFET gate...
ZX5T951G: Features: • Extremely low equivalent on-resistance; RSAT = 39mV at 5A• 5.5 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent ...
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Part Number | ZX5T951G |
Product Type | PNP |
VCEO (V) | -60 |
IC (A) | -5.5 |
ICM (A) | -15 |
PD (W) | 3 |
hFE Min | 100 10 |
hFE Max | 300 |
@ IC (A) | -2 -10 |
VCE (SAT) Max (mV) | -70 -250 |
@ IC (A) | -1 -5 |
@ IB (mA) | -100 -500 |
fT Min (MHz) | 120 |
RCE (SAT) (m) | 39 |
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Collector-base voltage | BVCBO |
-100 |
V |
Collector-emitter voltage | BVCEO |
-60 |
V |
Emitter-base voltage | BVEBO |
-7 |
V |
Continuous collector current (a) | IC |
-5.5 |
A |
Peak pulse current | ICM |
-15 |
A |
Power dissipation at TA =25°C (a) Linear derating factor |
PD |
3.0 24 |
W mW/°C |
Power dissipation at TA =25°C (b) Linear derating factor |
PD |
1.6 12.8 |
W mW/°C |
Operating and storage temperature range | Tj, Tstg |
-55 to +150 |
°C |