Features: • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A• 5.5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 20 ampsApplication• Emergency lighting circuits• Motor drivin...
ZX5T869Z: Features: • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A• 5.5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent...
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PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Collector-base voltage |
BVCBO |
60 |
V |
Collector-emitter voltage |
BVCEO |
25 |
V |
Emitter-base voltage |
BVEBO |
7 |
V |
Continuous collector current (a) |
IC |
5.5 |
A |
Peak pulse current |
ICM |
20 |
A |
Power dissipation at TA =25°C (a) Linear derating factor |
PD |
1.5 12 |
W mW/°C |
Power dissipation at TA =25°C (b) Linear derating factor |
PD |
2.1 16.8 |
W mW/°C |
Operating and storage temperature range | Tj, Tstg |
-55 to +150 |
°C |
Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor ZX5T869Z offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.