Features: ·Extremely low equivalent on-resistance; RSAT= 30mV at 6A·5 amps continuous current·Up to 20 amps peak current·Very low saturation voltages·Excellent hFE characteristics up to 10 ampsApplication·Emergency lighting circuits·Motor driving (including DC fans)·Solenoid, relay and actuator dr...
ZX5T851Z: Features: ·Extremely low equivalent on-resistance; RSAT= 30mV at 6A·5 amps continuous current·Up to 20 amps peak current·Very low saturation voltages·Excellent hFE characteristics up to 10 ampsAppli...
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PARAMETER | SYMBOL |
LIMIT |
UNIT |
Collector-basevoltage | BVCBO |
150 |
V |
Collector-emittervoltage | BVCEO |
60 |
V |
Emitter-basevoltage | BVEBO |
7 |
V |
Continuous collecto rcurrent(a) | IC |
5 |
A |
Peak pulse current | ICM |
20 |
A |
Power dissipation at TA=25(a) | PD |
1.5 |
W |
Linear derating factor |
12 |
mW/ | |
Power dissipation at TA=25(b) | PD |
2.1 |
W |
Linear derating factor |
16.8 |
mW/ | |
Operating and storage temperature range | Tj,Tstg |
-55 to +150 |
Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor ZX5T851Z offers extremely low on state losses making it ideal for use inDC-DC circuit sand various driving and power management functions.