ZVP4525E6

Features:

• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary N-channel Type ZVN4525E6
• SOT23-6 package




Application

• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
• Solid state relays




Pinout






Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Drain-Source Voltage	VDSS	-250	V
Gate Source Voltage	VGS	±40	V
Continuous Drain Current (VGS=10V; TA=25°C)(a) (VGS=10V; TA=70°C)(a)	ID ID	-197 -157	mA mA
Pulsed Drain Current (c)	IDM	-1	A
Continuous Source Current (Body Diode)	IS	-0.75	A
Pulsed Source Current (Body Diode)	ISM	-1	A
Power Dissipation at TA=25°C (a) Linear Derating Factor	PD	1.1 8.8	W mW/°C
Operating and Storage Temperature Range	Tj;Tstg	-55 to +150	W mW/°C

Part Number	ZVP4525E6
Config/ Polarity	P
PD (W)	1.1
VDSS (V)	-250
VGSS (+/-) (V)	40
ID (A)	-0.197
RDS (on) Max() @ VGS; -3.5V	18
RDS (on) Max() @ VGS; -6V	-
RDS (on) Max() @ VGS; -10.0V	14
VGS(th) (V)	-2
Ciss (typ) (pF)	73
Qg (typ) (nC) @ VGS; 10V	2.45

Description

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

SOT89 and SOT223 versions are also available.