MOSFET P-Chnl 60V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.16 A | ||
Resistance Drain-Source RDS (on) : | 14000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | E-Line | Packaging : | Bulk |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
Drain-Source Voltage |
VDS |
-60 |
V |
Continuous Drain Current at Tamb=25°C |
ID |
-160 |
mA |
Pulsed Drain Current |
IDM |
-1.6 |
A |
Gate Source Voltage |
VGS |
±20 |
V |
Power Dissipation at Tamb=25°C |
Ptot |
625 |
mW |
Operating and Storage Temperature Range |
Tj,Tstg |
-55 to +150 |
°C |
Part Number | ZVP3306A |
Config/ Polarity |
P |
PD (W) |
0.625 |
VDSS (V) |
-60 |
VGSS (+/-) (V) |
20 |
ID (A) |
-0.16 |
RDS(on) Max() @ VGS; -2.5V | - |
RDS(on) Max() @ VGS; 4.0V | - |
RDS(on) Max() @ VGS; -4.5V | - |
RDS(on) Max() @ VGS; -5V | - |
RDS(on) Max() @ VGS; -10V | 14 |
VGS(th) (V) |
-3.5 |
Ciss (typ) (pF) |
50(Max) |
Qg (typ) (nC) @ VGS; 10V |
- |