MOSFET P-Chnl 200V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 120 mA | ||
Resistance Drain-Source RDS (on) : | 25 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
Drain-Source Voltage |
VDS |
-200 |
V |
Continuous Drain Current at Tamb=25°C |
ID |
-120 |
mA |
Pulsed Drain Current |
IDM |
-1.2 |
A |
Gate Source Voltage |
VGS |
±20 |
V |
Power Dissipation at Tamb=25°C |
Ptot |
700 |
mW |
Operating and Storage Temperature Range |
Tj,Tstg |
-55 to +150 |
°C |