ZVN4525G

Features:

• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary P-channel Type ZVP4525G
• SOT223 package




Application

• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
• Solid state relays




Pinout






Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Drain-Source Voltage	VDSS	250	V
Gate Source Voltage	VGS	±40	V
Continuous Drain Current (VGS=10V; TA=25°C)(a) (VGS=10V; TA=70°C)(a)	ID ID	310 248	mA mA
Pulsed Drain Current (c)	IDM	1.44	A
Continuous Source Current (Body Diode)	IS	1.1	A
Pulsed Source Current (Body Diode)	ISM	1.44	A
Power Dissipation at TA=25°C (a) Linear Derating Factor	PD	2 16	W mW/°C
Operating and Storage Temperature Range	Tj;Tstg	-55 to +150	W mW/°C

Description

This 250V enhancement mode N-channel MOSFET of the ZVN4525G provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

SOT89 and SOT23-6 versions are also available.