MOSFET N-Chnl 100V
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.9 A | ||
Resistance Drain-Source RDS (on) : | 500 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | E-Line | Packaging : | Bulk |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
Drain-Source Voltage |
VDS |
100 |
V |
Continuous Drain Current at Tamb=25°C |
ID |
0.9 |
A |
Practical Continuous Drain Current at Tamb=25°C |
IDP |
1 |
A |
Pulsed Drain Current |
IDM |
12 |
A |
Gate-Source Voltage |
VGS |
± 20 |
V |
Power Dissipation at Tamb=25°C |
Ptot |
850 |
mW |
Practical Power Dissipation at Tamb=25°C* |
Ptotp |
1.13 |
W |
Operating and Storage Temperature Range |
Tj;Tstg |
-55 to +150 |
°C |