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ZVN4306AV

MOSFET Avalanche

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SeekIC No. : 00150622 Detail

ZVN4306AV: MOSFET Avalanche

ZVN4306AV Data Sheet

floor Price/Ceiling Price

US $ .52~.96 / Piece | Get Latest Price
Part Number:
ZVN4306AV
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.96
  • $.85
  • $.59
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.1 A
Resistance Drain-Source RDS (on) : 330 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 1.1 A
Package / Case : E-Line
Resistance Drain-Source RDS (on) : 330 mOhms


Features:

· 60 Volt VDS
· RDS(on)= 0.33W
· Repetitive Avalanche Rating




Application

·Solenoids / relay drivers for automotive
· Stepper Motor Drivers
· DC-DC convertors




Specifications

Part Number ZVN4306AV
Config/
Polarity		 N
PD
(W)		 1.1
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 1.1
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V 0.45
RDS(on) Max () @ VGS; 10.0V 0.33
VGS(th)
(V)		 1.3
Ciss (typ)
(pF)		 220
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V		 5.2


Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current at Tamb=25 ID 1.1 A
Practical Continuous Drain Current at
Tamb=25		 IDP 1.3 A
Pulsed Drain Current IDM 15 A
Avalanche Current-Repetitive IAR 1 A
Avalanche Energy-Repetitive EAR 25 mJ
Power Dissipation at Tamb=25 Ptot 850 W
Practical Power Dissipation at Tamb=25* Ptotp 1.13 W
Operating Junction and Storage Temperature Range TJ,TSTG - 55 to 175

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum






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