MOSFET Avalanche
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.6 A | ||
Resistance Drain-Source RDS (on) : | 1000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | E-Line | Packaging : | Bulk |
Part Number | ZVN4206AV |
Config/ Polarity |
N |
PD (W) |
0.7 |
VDSS (V) |
60 |
VGSS (+/-) (V) |
20 |
ID (A) |
0.6 |
RDS(on) Max () @ VGS; 1.8V | |
RDS(on) Max () @ VGS; 2.5V | |
RDS(on) Max () @ VGS; 4.0V | |
RDS(on) Max () @ VGS; 4.5V | |
RDS(on) Max () @ VGS; 5V | 1.5 |
RDS(on) Max () @ VGS; 10.0V | 1 |
VGS(th) (V) |
1.3 |
Ciss (typ) (pF) |
70 |
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 5V |
|
Qg (typ) (nC) @ VGS; 10V |
2.4 |
Symbol | Parameter | VALUE | Unit |
VDS | Drain-Source Voltage | 60 | V |
VGS | Gate-Source Voltage | ± 20 | mA |
ID | Drain Current | 600 | A |
IDM | Gate Current | 8 | V |
PTOT | Power Dissipation at Tamb=25°C | 700 | mW |
ISD | Continuous Body Diode Current at Tamb =25°C |
600 | mA |
IAR | Avalanche Current Repetitive | 600 | mA |
EAR | Avalanche Energy Repetitive | 15 | mJ |
TSTG | Storage Temperature | -55 to +150 |