MOSFET N-Chnl 100V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.2 A | ||
Resistance Drain-Source RDS (on) : | 10000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | E-Line | Packaging : | Bulk |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
Drain-Source Voltage |
VDS |
100 |
V |
Continuous Drain Current at Tamb=25°C |
ID |
200 |
mA |
Pulsed Drain Current |
IDM |
2 |
A |
Gate-Source Voltage |
VGS |
±20 |
V |
Power Dissipation at Tamb=25°C |
Ptot |
625 |
mW |
Operating and Storage Temperature Range |
Tj;Tstg |
-55 to +150 |
°C |