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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.18 A |
Resistance Drain-Source RDS (on) : | 10000 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | E-Line-3 |
Parameter |
Symbol |
Rating |
Unit |
Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range |
VDS ID IDM VGS Ptot Tj,Tstg |
200 180 2 ±20 700 -55 to +150 |
V mA A V mW |