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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.32 A |
Resistance Drain-Source RDS (on) : | 4000 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | E-Line-3 |
PARAMETER | SYMBOL | VALUE | UNIT |
Drain-Source Voltage | VDS | 100 | V |
Continuous Drain Current at Tamb=25°C | ID | 320 | mA |
Pulsed Drain Current | IDM | 6 | A |
Gate Source Voltage | VGS | ± 20 | V |
Power Dissipation at Tamb=25°C | Ptot | 700 | mW |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |