MOSFET -
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.16 A |
Resistance Drain-Source RDS (on) : | 16000 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | E-Line-3 |
PARAMETER |
SYMBOL |
VALUE |
UNIT |
Drain-Source Voltage |
VDS |
200 |
V |
Continuous Drain Current at Tamb=25°C |
ID |
150 |
mA |
Pulsed Drain Current |
IDM |
2 |
A |
Gate-Source Voltage |
VGS |
± 20 |
V |
Power Dissipation at Tamb=25°C |
Ptot |
700 |
mW |
Operating and Storage Temperature Range |
Tj;Tstg |
-55 to +150 |
°C |