ZTX688B

Transistors Bipolar (BJT) NPN Super E-Line

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SeekIC No. : 00206037 Detail

ZTX688B: Transistors Bipolar (BJT) NPN Super E-Line

floor Price/Ceiling Price

US $ .34~.57 / Piece | Get Latest Price
Part Number:
ZTX688B
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.57
  • $.48
  • $.39
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
Configuration : Single Maximum Operating Frequency : 150 MHz (Min)
Maximum Operating Temperature : + 200 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 12 V
Maximum DC Collector Current : 3 A
Maximum Operating Temperature : + 200 C
Maximum Operating Frequency : 150 MHz (Min)
Packaging : Bulk
Package / Case : E-Line


Features:

* 12 Volt VCEO
* Gain of 400 at IC=3 Amps
* Very low saturation voltage





Application

* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers





Specifications

PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
12
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
3
mA
Practical Power Dissipation *
PtotP
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum

Part Number ZTX688B
Product Type NPN
VCEO(V) 12
IC (A) 3
ICM (A) 10
PD (W) 1
hFE Min 500
400
hFE Max -
@ IC (A) 0.1
3
VCE (SAT) Max (mV) 40
350
@ IC (A) 0.1
3
@ IB (mA) 1
20
fT Min (MHz) 150
RCE (SAT) (m) -





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