ZTX618

Transistors Bipolar (BJT) NPN High Gain

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ZTX618 Picture
SeekIC No. : 00205871 Detail

ZTX618: Transistors Bipolar (BJT) NPN High Gain

floor Price/Ceiling Price

US $ .29~.43 / Piece | Get Latest Price
Part Number:
ZTX618
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.43
  • $.36
  • $.32
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3.5 A
Configuration : Single Maximum Operating Frequency : 140 MHz
Maximum Operating Temperature : + 200 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Packaging : Bulk
Maximum Operating Frequency : 140 MHz
Package / Case : E-Line
Maximum DC Collector Current : 3.5 A


Features:

* 10A Peak pulse current
* Excellent hFE characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* IC cont 3.5A





Application

* Power MOSFET gate driver in conjunction with complementary ZTX718




Specifications

Part Number ZTX618
Product Type NPN
VCEO(V) 20
IC (A) 3.5
ICM (A) 10
PD (W) 1
hFE Min 300
170
hFE Max -
@ IC (A) 0.2
3
VCE (SAT) Max (mV) 15
255
@ IC (A) 0.1
3.5
@ IB (mA) 10
50
fT Min (MHz) 100
RCE (SAT) (m) -


PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
3.5
A
Base Current
IB
500
mA
Practical Power Dissipation*
Ptotp
1.5
W
Power Dissipation
Ptot
1
W
Operating and Storage Temperature
Range
Tj,Tstg
-55 to +200
°C





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