Transistors Bipolar (BJT) NPN Avalanche
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 100 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.5 A | ||
Configuration : | Single | Maximum Operating Frequency : | 40 MHz (Min) | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | E-Line | Packaging : | Bulk |
PARAMETER | SYMBOL | VALUE | UNIT |
Collector-Base Voltage | VCBO | 260 | V |
Collector-Emitter Voltage | VCEO | 100 | V |
Emitter-Base Voltage | VEBO | 6 | V |
Continuous Collector Current | IC | 500 | mA |
Peak Collector Current (25ns Pulse Width) | ICM | 60 | A |
Power Dissipation | Ptot | 680 | mW |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +175 |
The ZTX415 is designed as one kind of NPN silicon planar avalanche transistor,features of ZTX415 are:(1)specifically designed for avalanche mode operation;(2)60A peak avalanche current (pulse width=20ns);(3)low inductance package.Also it can be used in laser LED drivers;fast edge generation;high speed pulse generators and suitable for single, series and parallel operation.
The absolute maximum ratings of the ZTX415 can be summarized as:(1)collector-base voltage:260 V;(2)collector-emitter voltage:100 V;(3)emitter-base voltage:6 V;(4)continuous collector current:500 mA;(5)peak collector current (pulse width=20ns):60 A;(6)power dissipation:680 mW;(7)operating and storage temperature range:-55 to +175 °C;(8)collector-base breakdown voltage:260 V;(9)collector-emitter breakdown voltage:100 V;(10)emitter-base breakdown voltage:6 V;(11)collector cut-Off current:0.1 or 10 uA;(12)emitter cut-Off current:0.1 uA;(13)collector-emitter saturation voltage:0.5 V;(14)base-emitter saturation voltage:0.9 V.If you want to know more information such as the electrical characteristics about the ZTX415,please download the datasheet in www.seekic.com .