DescriptionThe ZTX212 is a kind of plastic encapsulated general purpose transistor designed for small and medium signal amplifications from DC to radio frequencies. The typical applications of ZTX212include audio frequency amplifiers, driver and output stages, oscillators and general purpose switc...
ZTX212: DescriptionThe ZTX212 is a kind of plastic encapsulated general purpose transistor designed for small and medium signal amplifications from DC to radio frequencies. The typical applications of ZTX21...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The ZTX212 is a kind of plastic encapsulated general purpose transistor designed for small and medium signal amplifications from DC to radio frequencies. The typical applications of ZTX212 include audio frequency amplifiers, driver and output stages, oscillators and general purpose switches. Besides, the ZX212 is similar to the BC212. It has been approved for use in military equipment.
The following is about the absolute maximum ratings of ZTX212: (1)collector-base voltage, VCBO: -60 V; (2)collector-emitter voltage, VCEO: -50 V; (3)emitter-base voltage, VEBO: -5 V; (4)continuous collector current, IC: -200 mA; (5)power dissipation (at Tamb=25), Ptot: 500 mW; (6)operating and storage temperature range: -55 to +175.
What comes next is about the characteristics of ZTX212(at 25 ambient temperature unless otherwise stated): (1)collector-emitter saturation voltage, VCE(sat): -0.25 V max at IC=-10 mA, IB=-0.5 mA and -0.6 V at IC=-100 mA, IB=-5.0 mA; (2)collector-base cutoff current, ICBO: -15 nA at VCB=-30 V; (3)collector-emitter breakdown voltage, V(BR)CEO: -50 V at IC=-2 mA, IB=0; (4)collector-base breakdown voltage, V(BR)CBO: -60 V at IC=-10 A, IE=0; (5)emitter-base breakdown voltage, V(BR)EBO: -5 V at IE=-10 A, IC=0.