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ZTX1056A: Transistors Bipolar (BJT) NPN High Current

ZTX1056A Data Sheet

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Part Number:: ZTX1056A
Mfg:: Diodes Inc. / Zetex
Supply Ability:: 5000

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1~5000

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15 Days

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Upload time: 2024/11/20

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Recent History
What is this?

ZTX10470ASTOA evaluate
US $.18 - .23 / Piece

Transistors Bipolar (BJT) NPN High Gain & Crnt
ZTX10470ASTOB evaluate
US $.18 - .23 / Piece

Transistors Bipolar (BJT) NPN High Gain & Crnt
ZTX1047A evaluate
US $.24 - .25 / Piece

Transistors Bipolar (BJT) NPN High Gain & Crnt

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	160 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	3 A
Configuration :	Single	Maximum Operating Frequency :	120 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Bulk

Description

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 3 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 160 V
Maximum Operating Frequency : 120 MHz

Features:

* V_CEO=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage

Specifications

Part Number	ZTX1056A
Product Type	NPN
V_CEO (V)	160
I_C (A)	3
I_CM (A)	6
P_D (W)	1
h_FE Min	300
h_FE Max	1200
@ I_C (A)	0.5
V_{CE (SAT)} Max (mV)	250
@ I_C (A)	2
@ I_B (mA)	100
f_T Min (MHz)	120
R_{CE (SAT)} (m)	-

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage	V_CBO	200	V
Collector-Emitter Voltage	V_CEO	160	V
Emitter-Base Voltage	V_EBO	5	V
Peak Pulse Current	I_CM	6	A
Continuous Collector Current	I_C	3	A
Base Current	I_B	500	mA
Power Dissipation at Tamb=25°C	P_tot	1	W
Operating and Storage Temperature Range	T_j,T_stg	-55 to +200	°C

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ZTX1056A

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