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ZTX1055A: Transistors Bipolar (BJT) NPN High Current

ZTX1055A Data Sheet

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Part Number:: ZTX1055A
Mfg:: Diodes Inc. / Zetex
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/21

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ZTX10470ASTOA evaluate
US $.18 - .23 / Piece

Transistors Bipolar (BJT) NPN High Gain & Crnt
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US $.18 - .23 / Piece

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US $.24 - .25 / Piece

Transistors Bipolar (BJT) NPN High Gain & Crnt

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	120 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	3 A
Configuration :	Single	Maximum Operating Frequency :	130 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Bulk

Description

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 130 MHz
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 120 V

Features:

* V_CEO=120V
* 3 Amp continuous Current
* 6 Amp pulse Current
* Very Low Saturation Voltage

Application

* Automotive Switching Circuit
* Audio Driver Stages

Specifications

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range	VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg	175 120 5 6 3 500 1 -55 to +200	V V V A A mA W °C

Part Number	ZTX1055A
Product Type	NPN
V_CEO (V)	120
I_C (A)	3
I_CM (A)	6
P_D (W)	1
h_FE Min	300
h_FE Max	1200
@ I_C (A)	1
V_{CE (SAT)} Max (mV)	310
@ I_C (A)	3
@ I_B (mA)	150
f_T Min (MHz)	130
R_{CE (SAT)} (m)	-

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ZTX1055A

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