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ZO-28F

Specifications Maximum Power Dissipation @ 25 40 Watts Maximum Voltage and Current BVisIsIcHfe Injector to Supplier VoltageSupplier CurrentController CurrentTransistor Current Gain - Min 35 Volts3.5 Amps0.3 Amps30 Maximum Temperatures Storage TemperatureOperating Junction Tempe...

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SeekIC No. : 004551781 Detail

ZO-28F: Specifications Maximum Power Dissipation @ 25 40 Watts Maximum Voltage and Current BVisIsIcHfe Injector to Supplier VoltageSupplier CurrentController CurrentTransistor Current Gain - Mi...

ZO-28F Data Sheet

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Part Number:
ZO-28F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25 40 Watts
Maximum Voltage and Current
BVis

Is

Ic

Hfe		 Injector to Supplier Voltage

Supplier Current

Controller Current

Transistor Current Gain - Min		 35 Volts

3.5 Amps

0.3 Amps

30
Maximum Temperatures
Storage Temperature

Operating Junction Temperature		 - 65 to + 150

+ 200



Description

The ZO-28/F is a bias device designed to work with very high power BiPolar transistors, operating Class A and AB. It has extremely low source impedance and high current handling capability. The package of ZO-28/F may be physically mounted to the same heat sink as the RF transistor, providing very accurate thermal tracking.




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