ZMD 100

Specifications Power dissipation Verlustleistung TA = 25 Ptot 1 W 1) Operating junction temperature Sperrschichttemperatur Tj 50...+175 Storage temperature Lagerungstemperatur TS 50...+175 Thermal resistance junction to ambient airWärmewiderstand Sperrschicht umg...

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ZMD 100: Specifications Power dissipation Verlustleistung TA = 25 Ptot 1 W 1) Operating junction temperature Sperrschichttemperatur Tj 50...+175 Storage temperature Lagerungstemperatur ...

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Part Number:
ZMD 100
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Description



Specifications

Power dissipation Verlustleistung TA = 25 Ptot 1 W 1)
Operating junction temperature Sperrschichttemperatur   Tj 50...+175
Storage temperature Lagerungstemperatur   TS 50...+175
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
  RthA < 150 K/W 1)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht Kontaktfläche
  RthT < 60 K/W
Zener voltages see table on next page Zener-Spannungen siehe Tabelle auf der nächsten Seite


1) Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses – Gemessen mit Impulsen
3) The ZMD 1 is a diode operated in forward. Hence, the index of all parameters should be “F” instead of    “Z”.
The cathode, indicated the yellow ring is to be connected to the negative pole.
Die ZMD 1 ist eine in Durchlaß betriebene Si-Diode. Daher ist bei allen Kenn- und Grenzwerten der Index  "F"    anstatt “Z” zu setzten. Die durch den gelben Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.




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