Features: • Dual NPN device• Very low saturation voltage• High gain• SM 8 packageApplication• CCFL invertors• Royer circuitsSpecifications Parameter Symbol Ratings Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VC...
ZDT1048: Features: • Dual NPN device• Very low saturation voltage• High gain• SM 8 packageApplication• CCFL invertors• Royer circuitsSpecifications Parameter Symbo...
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Parameter |
Symbol |
Ratings |
Unit |
Collector-Emitter Voltage |
VCEO |
50 |
V |
Collector-Base Voltage |
VCBO |
17.5 |
V |
Emitter-Base Voltage |
VEBO |
5 |
V |
Peak pulse current |
ICM |
20 |
A |
Continuous collector current |
IC |
5 |
A |
Base current |
IB |
500 |
mA |
Operating and storage temperature range |
Tj,Tstg |
-55 to 150 |
Advanced process capability has been used to achieve this high performance device of ZDT1048. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications.