DescriptionThe features of ZBD949 can be summarized as (1)guaranteed hFE specified up to 5 AMPs; (2)low collector-emitter saturation voltage: 0.11V maximum at 1A, 0.45V maximum at 5A. The absolute maximum ratings of the ZBD949 are: (1)collector-base voltage: -50V; (2)collector-emitter voltage: -3...
ZBD949: DescriptionThe features of ZBD949 can be summarized as (1)guaranteed hFE specified up to 5 AMPs; (2)low collector-emitter saturation voltage: 0.11V maximum at 1A, 0.45V maximum at 5A. The absolute ...
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The features of ZBD949 can be summarized as (1)guaranteed hFE specified up to 5 AMPs; (2)low collector-emitter saturation voltage: 0.11V maximum at 1A, 0.45V maximum at 5A.
The absolute maximum ratings of the ZBD949 are: (1)collector-base voltage: -50V; (2)collector-emitter voltage: -30V; (3)emitter-base voltage: -6V; (4)peak pulse current: -20A; (5)continous collector current: -5A; (6)power dissipation at Tamb=25: 2W; (7)power dissipation at Tcase=25: 25W; (8)operating and storage temperature range: -55 to +200.
The following is about the electrical characteristics of ZBD949: (1)collector-base breakdown voltage: -50V min and -80V typical at IC=-100A; (2)collector-emitter breakdown voltage: -50V min and -80V typical at IC=-1A, RB1k; (3)collector-emitter breakdown voltage: -30V min and -45V typical at IC=-10mA; (4)emitter-base breakdown voltage: -6V min and -8V typical at IE=-100A; (5)collector cut-off current: -50nA max at VCB=-40V; (6)emitter cut-off current: -10nA at VEB=-6V.