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Z2SMB1

Specifications Power dissipation Verlustleistung TA = 50 Ptot 2 W 1) Non repetitive peak power dissipation, t Einmalige Impuls-Verlustleistung, t < 10 ms TA = 50 PZSM 40 W Operating junction temperature - Sperrschichttemperatur Tj - 50...+150 Storage temperature - Lagerun...

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Z2SMB1: Specifications Power dissipation Verlustleistung TA = 50 Ptot 2 W 1) Non repetitive peak power dissipation, t Einmalige Impuls-Verlustleistung, t < 10 ms TA = 50 PZSM 40 W Operatin...

Z2SMB1 Data Sheet

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Part Number:
Z2SMB1
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Specifications

Power dissipation Verlustleistung TA = 50 Ptot 2 W 1)
Non repetitive peak power dissipation, t < 10 ms
Einmalige Impuls-Verlustleistung, t < 10 ms		 TA = 50 PZSM 40 W
Operating junction temperature - Sperrschichttemperatur Tj - 50...+150
Storage temperature - Lagerungstemperatur TS - 50...+175
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht - umgebende Luft		 RthA < 60 K/W 1)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht - Anschluß		 RthT < 15 K/W
Zener voltages see table on next page -Zener-Spannungen siehe Tabelle auf der nächsten Seite

1) Mounted on P.C. board with 50 mm2 copper pads at each terminal Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses - Gemessen mit Impulsen
3) The Z3SMB 1 is a diode operated in forward. Hence, the index of all parameters should be "F" instead of "Z".
The cathode, indicated by a white band is to be connected to the negative pole. Die Z3SMB 1 ist eine in Durchlaß betriebene Si-Diode. Daher ist bei allen Kenn- und Grenzwerten der Index "F" anstatt "Z" zu setzten. Die mit weißem Balken gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.


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