Z0409BE

The Z0409BE is a kind of high performance PNPN device diffused with TAG's proprietary Top Glass Process. It is designed for general purpose applications where moderate gate sensitivity is required.

The following is about the absolute maximum ratings Z0409BE (TA=25 unless otherwise noted): (1)repetitive peak off state voltage, VDRM: 200 V (Tj=-40 to 125, RGK=1 K); (2)on-state current, IT(RMS): 4.0 A under all conduction angles TC=75; (3)nonrepetitive on-state current, ITSM: 25 A when half cycle, 60 Hz and 22 A when half cycle, 50 Hz; (4)peak gate current, IGM: 1.2 A when 10s max; (5)peak gate dissipation, PGM: 3 W when 10s max; (6)gate power dissipation, PG(AV): 0.2 W when 20 ms max; (7)operating temperature, Tj: -40 to 125; (8)storage temperature, Tstg: -40 to +150; (9)soldering temperature, Tsld: 250 when 1.6 mm from case, 10 s max.

The last one is about the electrical characteristics Z0409BE (TA=25 unless otherwise noted): (1)off-state leakage current, IDRM: 200A max when VD=VDRM, RGK=1 K, Tj=125 and 5A max when VD=VDRM, RGK=1 K, Tj=25; (2)on-state voltage, VT: 2.10 V max at IT=6.0 A, Tj=25; (3)on-state threshold voltage, VT(TO): 0.95 V max at Tj=125; (4)on-state slope resistance, rT: 180 m max at Tj=125; (5)gate trigger voltage, VGT: 2 V at VD=12 V; (6)holding current, IH: 10 mA at RGK=1 K.