YTA640

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 15A
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Input Capacitance (Ciss) @ Vds: 2000pF @ 10V
Power - Max: 80W
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V


Parameters:

Technical/Catalog Information	YTA640
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	180 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 10V
Power - Max	80W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	YTA640 YTA640