Y34NB50

The Y34NB50 is designed as N-channel powerMESH MOSFET. Using the latest high voltage MESH OVERLAY process, SGS-thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. Y34NB50's typical applications include high current, high speed switching, switch mode power supply (smps), DC-AC converter for welding equipment and uninterruptable power supply and motor drive.

Y34NB50 has seven features. (1) Typicalrds(on) = 0.11. (2) Extremely high dv/dt capability. (3) ±30V gate to source voltage rating. (4) 100% avalanche tested. (5) Low intrinsic capacitance. (6) Gatecharge minimized. (7) Reduced voltage spread. That are all the main features.

Some absolute maximum ratings of Y34NB50 have been concluded into several points as follow. (1) Its drain to source voltage would be 500V. (2) Its drain to gate voltage would be 500V. (3) Its gate to source voltage would be +/-30V. (4) Its drain current (continuous) at Tc=25°C would be 34A and it would be 21.4A at Tc=100°C. (5) Its drain current (pulsed) would be 136A. (6) Its total dissipation at Tc=25°C would be 450W and its derating factor would be 3.61W/°C. (7) Its peak diode recovery voltage slope would be 4.5V/ns. (8) Its storage temperature would be from -65°C to 150°C. (9) Its maximum operating junction temperature would be 150°C.

And some electrical characteristics about Y34NB50. (1) Its drain to source breakdown voltage would be min 500V. (2) Its zero gate voltage drain current would be 10uA and it would be 125°C at Tc=125°C. (3) Its gate-body leakage current would be max +/-100nA. And so on. If you have any question or suggestion or want to know more information of Y34NB50 please contact us for details. Thank you!