XSD411

The XSD411 is designed as one kind of n-channel enhancement mode dual DMOS fet that can be used in (1)wideband differential amplifiers; (2)cascode amplifiers; (3)high intercept point balanced mixers; (4)oscillators; (5)high speed analog comparators applications.

Features of the XSD411 are:(1)normally "off" configuration; (2)high speed switching: under 1 ns (typically); (3)ultra low capacitance: ciss <3.5 pf (typically); (4)tight matching characteristics; (5)pin compatible to industry standard dual JFETs with addition of substrate bias pin.

The absolute maximum ratings of the XSD411 can be summarized as:(1)Drain-Source Voltage: +20 V;(2)Source-Drain Voltage: +10 V;(3)Drain-Body voltage: +25 V;(4)Source-Body Voltage: +15 V;(5)Gate-Drain Voltage: +25 V;(6)Gate-Source Voltage: +25 V;(7)Gate-Body Voltage: +25 V;(8)Gate-to-Gate Voltage: +25 V;(9)Drain-to-Drain Voltage: +20 V;(10)Source-to-Source Voltage: +15 V;(11)Continuous Drain Current: +50 mA;(12)Device Dissipation (each side): 360 mW;(13)Derating Factor: 2.88 mW/;(14)Total Device Dissipation: 500 mW;(15)Operating Junction Temperature Range: -55 to +125 ;(16)Storage Temperature Range: -55 to +150 .

The electrical characteristics of XSD411 can be summarized as:(1)Drain Source Breakdown Voltage: 20 V;(2)Source-Drain Breakdown Voltage: 10 V;(3)Drain-Source Leakage Current: 0.7 to 10 nA;(4)Gate-Body Leakage Current: 1.0 uA;(5)Gate-Source Threshold Voltage: 0.5 to 2.0 V;(6)Drain-Source ON Resistance: 70 ohms;(7)Common-Source Forward Transconductance: 10 to 12 mS;(8)Differential Gate Source Voltage: 25 mV;(9)Differential Drift: 25 mV/. If you want to know more information about XSD411, please download the datasheet in www.seekic.com or www.chinaicmart.com .