Features: Sub-harmonic ReceiverIntegrated LNA, LO Buffer, Image Reject Mixer7x7 mm, QFN+2.0 dBm LO Drive Level3.0 dB Noise Figure20.0 dB Image Rejection100% On-Wafer RF, DC and Noise Figure TestingSpecifications Drain Bias Voltage (Vd) +4.5 Vdc Supply Current (Id1,Id2) 180, 165 mA Gat...
XR1005-QD: Features: Sub-harmonic ReceiverIntegrated LNA, LO Buffer, Image Reject Mixer7x7 mm, QFN+2.0 dBm LO Drive Level3.0 dB Noise Figure20.0 dB Image Rejection100% On-Wafer RF, DC and Noise Figure TestingS...
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Drain Bias Voltage (Vd) | +4.5 Vdc |
Supply Current (Id1,Id2) | 180, 165 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (RF Pin) | 0.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table3 |
Channel Temperature (Tch) | MTTF Table3 |
XR1005-QD Mimix Broadband's 19.0-26.0 GHz GaAs packaged receiver has a noise figure of 3.0 dB and 20.0 dB image rejection across the band. This XR1005-QD is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This XR1005-QD uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.