Features: ·Two elements incorporated into one package. (Drain-coupled FETs)·Reduction of the mounting area and assembly cost by one half.·Low-frequency and low-noise J-FET.Specifications Parameter Symbol Ratings Unit Ratingofelement Gate to drain voltage VGDS -50 V Drain current ...
XP1D873: Features: ·Two elements incorporated into one package. (Drain-coupled FETs)·Reduction of the mounting area and assembly cost by one half.·Low-frequency and low-noise J-FET.Specifications Parame...
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Parameter | Symbol | Ratings | Unit | |
Rating of element |
Gate to drain voltage | VGDS | -50 | V |
Drain current | ID | 30 | mA | |
Gate current | VEBO | 10 | mA | |
Overall | Total power dissipation | PT | 150 | mW |
Channel temperature | Tch | 150 | ||
Storage temperature | Tstg | -55 to +150 |