XP162A12A6PR

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Power - Max: 2W
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 2.5A
Package / Case: TO-243AA
Input Capacitance (Ciss) @ Vds: 310pF @ 10V
Manufacturer: Torex Semiconductor Ltd
Supplier Device Package: SOT-89
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 4.5V


Features:

·Low on-state resistance : Rds (on) = 0.17Ω ( Vgs = -4.5V )
: Rds (on) = 0.3Ω ( Vgs = -2.5V )
·Ultra high-speed switching
·Operational Voltage : -2.5V
·Gate protect diode built-in
·High density mounting : SOT - 89




Application

·Notebook PCs
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems




Pinout






Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	-20	V
Gate-Source Voltage	Vgss	±20	V
Drain Current (DC)	Id	-2.5	A
Drain Current (Pulse)	Idp	-10	A
Reverse Drain Current	Idr	-2.5	A
Continuous Channel Power Dissipation (note)	Pd	2	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package of XP162A12A6PR makes high density mounting possible.