Features: `Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V )`Ultra high-speed switching`Operational Voltage : -4.5V`Gate protect diode built-in`High density mounting : SOT - 89Application·Notebook PCs·Cellular and portable phones·On - board power supplies·Li ...
XP162A11COPR: Features: `Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V )`Ultra high-speed switching`Operational Voltage : -4.5V`Gate protect diode built-in`High density mo...
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Features: Low on-state resistance: Rds(on)=0.11(Vgs=10V) Rds(on)=0.18(Vgs=4.5V)Ultra high-speed sw...
PARAMETER |
SYMBOL |
RATINGS |
UNITS |
Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature |
Vdss Vgss Id Idp Idr Pd Tch Tstg |
-30V + 20V -2.5 -10A -2.5 2 150 -55 to 150 |
V V A A A W |
The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible.