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XP162A01B5PR

Features: Low on-state resistance: Rds(on)=0.25(Vgs=-4.5V)Rds(on)=0.4(Vgs=-2.5V)Ultra high-speed switchingOperational Voltage: -2.5VHigh density mounting: SOT-89ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-ion battery systemsPinoutSpecifications PARAMETER ...

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XP162A01B5PR: Features: Low on-state resistance: Rds(on)=0.25(Vgs=-4.5V)Rds(on)=0.4(Vgs=-2.5V)Ultra high-speed switchingOperational Voltage: -2.5VHigh density mounting: SOT-89ApplicationNotebook PCsCellular and p...

XP162A01B5PR Data Sheet

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Part Number:
XP162A01B5PR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Low on-state resistance: Rds(on)=0.25(Vgs=-4.5V)
                                          Rds(on)=0.4(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage: -2.5V
High density mounting: SOT-89


Application

 Notebook PCs
 Cellular and portable phones
 On-board power supplies
 Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Vdss

-20

V

Gate-Source Voltage

Vgss

±12

V

Drain Current (DC)

Id

-2

A

Drain Current (Pulse)

Idp

-6

A

Reverse Drain Current

Idr

-2

A

Continuous Channel
Power Dissipation (note)

Pd

2

W

Channel Temperature

Tch

150

Storage Temperature

Tstg

-55~150




Description

The XP162A01B5PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the XP162A01B5PR can be efficiently set thereby saving energy.

The small SOT-89 package of XP162A01B5PR makes high density mounting possible.




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