XP161A11A1PR

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 4A
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Power - Max: 2W
Vgs(th) (Max) @ Id: -
Package / Case: TO-243AA
Input Capacitance (Ciss) @ Vds: 270pF @ 10V
Manufacturer: Torex Semiconductor Ltd
Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V
Supplier Device Package: SOT-89


Features:

·Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V)
                                         : Rds(on)=0.105Ω(Vgs=4.5V)
·Ultra high-speed switching
·Gate Protect Diode Built-in
·Operational Voltage       : 4.5V
·High density mounting   : SOT-89


Application

· Notebook PCs
· Cellular and portable phones
· On-board power supplies
· Li-ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	30	V
Gate-Source Voltage	Vgss	±20	V
Drain Current (DC)	Id	4	A
Drain Current (Pulse)	Idp	16	A
Reverse Drain Current	Idr	4	A
Continuous Channel Power Dissipation (note)	Pd	2	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package of XP161A11A1PR makes high density mounting possible.