PinoutDescriptionThe XP161A0390PR is designed as one kind of N-Channel power MOSFET with low on-state resistance and ultra high-speed switching characteristics which produced by the TOREX.Features of the XP161A0390PR are:(1)N-Channel power MOS FET;(2)DMOS structure;(3)low on-state resistance:0.09 ...
XP161A0390PR: PinoutDescriptionThe XP161A0390PR is designed as one kind of N-Channel power MOSFET with low on-state resistance and ultra high-speed switching characteristics which produced by the TOREX.Features o...
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Features: Low on-state resistance: Rds(on)=0.11(Vgs=10V) Rds(on)=0.18(Vgs=4.5V)Ultra high-speed sw...
Features: Low on-state resistance: Rds(on)=0.11(Vgs=4.5V) Rds(on)=0.17(Vgs=2.5V)Ultra high-speed s...
The XP161A0390PR is designed as one kind of N-Channel power MOSFET with low on-state resistance and ultra high-speed switching characteristics which produced by the TOREX.Features of the XP161A0390PR are:(1)N-Channel power MOS FET;(2)DMOS structure;(3)low on-state resistance:0.09 (max);(4)ultra high-speed switching;(5)SOT-89 package.It can be used in notebook PCs,cellular and portable phones,on-board power supplies and Li-ion battery systems.
The absolute maximum ratings of the XP161A0390PR can be summarized as:(1)drain-source voltage:20 V;(2)gate-source voltage:±8 V;(3)drain current (DC):3 A;(4)drain current (pulse):9 A;(5)reverse drain current:3 A;(6)continuous channel power dissipation (note):2 W;(7)channel temperature:150 ;(8)storage temperature:-55 to 150 ;(9)high density mounting:SOT-89;(10)operational voltage :1.5V;(11)gate protect diode built-in;(12)ultra high-speed switching;(13)low on-state resistance:Rds(on)=0.09(Vgs=4.5V),Rds(on)=0.13(Vgs=2.5V),Rds(on)=0.3 (Vgs=1.5V).If you want to know more information such as the electrical characteristics about the XP161A0390PR,please download the datasheet in www.seekic.com .