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XP152A12COMR

Features: ·Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V ): Rds (on) = 0.5Ω ( Vgs = -2.5V )·Ultra high-speed switching·Gate Protect Diode Built-in·Operational Voltage: -2.5V·High density mounting: SOT - 23Application·Notebook PCs·Cellular and portable phones·On - board power ...

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XP152A12COMR: Features: ·Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V ): Rds (on) = 0.5Ω ( Vgs = -2.5V )·Ultra high-speed switching·Gate Protect Diode Built-in·Operational Voltage: -2.5V·Hi...

XP152A12COMR Data Sheet

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Part Number:
XP152A12COMR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V )
: Rds (on) = 0.5Ω ( Vgs = -2.5V )
·Ultra high-speed switching
·Gate Protect Diode Built-in
·Operational Voltage: -2.5V
·High density mounting: SOT - 23




Application

·Notebook PCs
·Cellular and portable phones
·On - board power supplies
·Li - ion battery systems




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss -20 V
Gate-Source Voltage Vgss ±12 V
Drain Current (DC) Id -0.7 A
Drain Current (Pulse) Idp -2.8 A
Reverse Drain Current Idr -0.7 A
Continuous Channel
Power Dissipation (note)		 Pd 0.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150





Description

The XP152A12COMR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.






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