XP152A12C0MR

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 500mW
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 700mA
Supplier Device Package: SOT-23
Input Capacitance (Ciss) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
Manufacturer: Torex Semiconductor Ltd


Features:

·Low on-state resistance  : Rds (on) = 0.3Ω ( Vgs = -4.5V )
                                           : Rds (on) = 0.5Ω ( Vgs = -2.5V )
·Ultra high-speed switching
·Gate Protect Diode Built-in
·Operational Voltage         : -2.5V
·High density mounting     : SOT-23


Application

·Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems


Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain - Source Voltage	Vdss	-20	V
Gate - Source Voltage	Vgss	± 12	v
Drain Current (DC)	Id	-0.7	A
Drain Current (Pulse)	Idp	-2.8	A
Reverse Drain Current	Idr	-0.7	A
Continuous Channel Power Dissipation (note)	Pd	0.5	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55 ~150

Description

The XP152A12C0MR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently setthereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.