XP152A11E5MR

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 700mA
Power - Max: 500W
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 250 mOhm @ 400mA, 10V
Input Capacitance (Ciss) @ Vds: 160pF @ 10V
Manufacturer: Torex Semiconductor Ltd


Features:

Low on-state resistance : Rds (on) = 0.25 ( V_gs = -10V )
                                            Rds (on) = 0.45 ( V_gs = -4.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : -4.5V
High density mounting : SOT - 23


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain - Source Voltage	Vdss	-30	V
Gate - Source Voltage	Vgss	+ 20	V
Drain Current (DC)	Id	-0.7	A
Drain Current (Pulse)	Idp	-2.8	A
Reverse Drain Current	Idr	-0.7	A
Continuous Channel Power Dissipation (note)	Pd	0.5	W
Channel Temperature	Tch	150	OC
Storage Temperature	Tstg	-55 to 150	OC

Description

The XP152A11E5MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.