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XP152A01D8MR

Features: Low on-state resistance : Rds(on)=0.48Ω(Vgs=-4.5V): Rds(on)=0.80Ω(Vgs=-2.5V)Ultra high-speed switchingOperational Voltage : -2.5VHigh density mounting : SOT-23Application· Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery systemsPinoutSpecificat...

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SeekIC No. : 004549001 Detail

XP152A01D8MR: Features: Low on-state resistance : Rds(on)=0.48Ω(Vgs=-4.5V): Rds(on)=0.80Ω(Vgs=-2.5V)Ultra high-speed switchingOperational Voltage : -2.5VHigh density mounting : SOT-23Application· Note...

XP152A01D8MR Data Sheet

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Part Number:
XP152A01D8MR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance : Rds(on)=0.48Ω(Vgs=-4.5V)
                                       : Rds(on)=0.80Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage        : -2.5V
High density mounting    : SOT-23


Application

· Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss -20 V
Gate-Source Voltage Vgss ±12 V
Drain Current (DC) Id -0.5 A
Drain Current (Pulse) Idp -1.5 A
Reverse Drain Current Idr -0.5 A
Continuous Channel
Power Dissipation (note)		 Pd 0.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP152A01D8MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible.




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