XP151A13A0MR

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 1A
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds: 220pF @ 10V
Manufacturer: Torex Semiconductor Ltd


Features:

Low on-state resistance : Rds (on) = 0.1 ( Vgs = 4.5V )
                                           Rds (on) = 0.14 ( Vgs = 2.5V )
                                           Rds (on) = 0.25 ( Vgs = 1.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 1.5V
High density mounting : SOT - 23


Application

􀀀Notebook PCs
􀀀Cellular and portable phones
􀀀On - board power supplies
􀀀Li - ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	20	V
Gate-Source Voltage	Vgss	±8	V
Drain Current (DC)	Id	1	A
Drain Current (Pulse)	Idp	4	A
Reverse Drain Current	Idr	1	A
Continuous Channel Power Dissipation (note)	Pd	0.5	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.