XP151A11B0MR

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 500mW
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 1A
Supplier Device Package: SOT-23
Input Capacitance (Ciss) @ Vds: 150pF @ 10V
Manufacturer: Torex Semiconductor Ltd
Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V


Features:

·Low on-state resistance : Rds (on) = 0.12Ω ( Vgs = 10V )
                                          : Rds (on) = 0.17Ω ( Vgs = 4.5V )
·Ultra high-speed switching
·Gate Protect Diode Built-in
·Operational Voltage        : 4.5V
·High density mounting    : SOT-23


Application

·Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	30	V
Gate-Source Voltage	Vgss	±20	V
Drain Current (DC)	Id	1	A
Drain Current (Pulse)	Idp	4	A
Reverse Drain Current	Idr	1	A
Continuous Channel Power Dissipation (note)	Pd	0.5	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP151A11B0MR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package of XP151A11B0MR makes high density mounting possible.