Features: ·Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V) : Rds(on)=0.32Ω(Vgs=2.5V)·Ultra high-speed switching·Operational Voltage : 2.5V·High density mounting : SOT-23Application· Notebook PCs· Cellular and portable phones· On-board power supplies· Li-ion battery systemsPinoutSpecifi...
XP151A02B0MR: Features: ·Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V) : Rds(on)=0.32Ω(Vgs=2.5V)·Ultra high-speed switching·Operational Voltage : 2.5V·High density mounting : SOT-23Application· Note...
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PARAMETER | SYMBOL | RATINGS | UNITS |
Drain-Source Voltage | Vdss | 20 | V |
Gate-Source Voltage | Vgss | ±12 | V |
Drain Current (DC) | Id | 0.8 | A |
Drain Current (Pulse) | Idp | 2.5 | A |
Reverse Drain Current | Idr | 0.8 | A |
Continuous Channel Power Dissipation (note) |
Pd | 0.5 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55~150 |
The XP151A02B0MR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package of XP151A02B0MR makes high density mounting possible.