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XP151A01C3MR

Features: Low on-state resistance: Rds(on)=0.2(Vgs=10V) Rds(on)=0.33(Vgs=4.5V)Ultra high-speed switchingOperational Voltage: 4.5VHigh density mounting: SOT-23Application Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systemsPinoutSpecifications ...

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XP151A01C3MR: Features: Low on-state resistance: Rds(on)=0.2(Vgs=10V) Rds(on)=0.33(Vgs=4.5V)Ultra high-speed switchingOperational Voltage: 4.5VHigh density mounting: SOT-23Application Applications Notebook PCs C...

XP151A01C3MR Data Sheet

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Part Number:
XP151A01C3MR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance: Rds(on)=0.2(Vgs=10V)
                                           Rds(on)=0.33(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage: 4.5V
High density mounting: SOT-23


Application

Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss 30 V
Gate-Source Voltage Vgss ±20 V
Drain Current (DC) Id 0.8 A
Drain Current (Pulse) Idp 2.5 A
Reverse Drain Current Idr 0.8 A
Continuous ChannelPower Dissipation (note) Pd 0.5 W
Channel Temperature Tch 150  
Storage Temperature Tstg -55~150  
Note: When implemented on a glass epoxy PCB


Description

The XP151A01C3MR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the XP151A01C3MR can be efficiently set thereby saving energy.

The small SOT-23 package of XP151A01C3MR makes high density mounting possible.


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