Features: 32 dBm Saturated RF Power41 dBm Output IP3 Linearity17 dB Gain ControlOn-Chip Power Detector4x4mm Standard QFN Package100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +10.0V Supply Current (Id1,2,3) 1500 mA Gate Bias Voltage (Vg1,2,3) -3V Max Power Dissipation (Pdi...
XP1043-QH: Features: 32 dBm Saturated RF Power41 dBm Output IP3 Linearity17 dB Gain ControlOn-Chip Power Detector4x4mm Standard QFN Package100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +10.0V ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Supply Voltage (Vd1,2,3) | +10.0V |
Supply Current (Id1,2,3) | 1500 mA |
Gate Bias Voltage (Vg1,2,3) | -3V |
Max Power Dissipation (Pdiss) | 8.0W |
RF Input Power | +19 dBm |
Operating Temperature (Ta) | -55 to +85 |
Storage Temperature (Tstg) | -65 to +150 |
Channel Temperature (Tch) | -40 to MTTF Graph2 |
The XP1043-QH is a packaged linear power amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 20 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier XP1043-QH is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device isanufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. XP1043-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.