XP1043-QH

Features: 32 dBm Saturated RF Power41 dBm Output IP3 Linearity17 dB Gain ControlOn-Chip Power Detector4x4mm Standard QFN Package100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +10.0V Supply Current (Id1,2,3) 1500 mA Gate Bias Voltage (Vg1,2,3) -3V Max Power Dissipation (Pdi...

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SeekIC No. : 004548923 Detail

XP1043-QH: Features: 32 dBm Saturated RF Power41 dBm Output IP3 Linearity17 dB Gain ControlOn-Chip Power Detector4x4mm Standard QFN Package100% RF TestingSpecifications Supply Voltage (Vd1,2,3) +10.0V ...

floor Price/Ceiling Price

Part Number:
XP1043-QH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

32 dBm Saturated RF Power
41 dBm Output IP3 Linearity
17 dB Gain Control
On-Chip Power Detector
4x4mm Standard QFN Package
100% RF Testing





Specifications

Supply Voltage (Vd1,2,3) +10.0V
Supply Current (Id1,2,3) 1500 mA
Gate Bias Voltage (Vg1,2,3) -3V
Max Power Dissipation (Pdiss) 8.0W
RF Input Power +19 dBm
Operating Temperature (Ta) -55 to +85
Storage Temperature (Tstg) -65 to +150
Channel Temperature (Tch) -40 to MTTF Graph2
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF.
Channel temperature should be kept as low as possible to maximize lifetime.





Description

The XP1043-QH is a packaged linear power amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 20 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier XP1043-QH is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device isanufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. XP1043-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.






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