XN1D873

Features: · Two elements incorporated into one package. (Drain-coupled FETs)· Reduction of the mounting area and assembly cost by one half.· Low-frequency and low-noise J-FET.Specifications Parameter Symbol Ratings Unit Ratingofelement Gate to drain voltage VGDO -50 V Drain curre...

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XN1D873 Picture
SeekIC No. : 004548666 Detail

XN1D873: Features: · Two elements incorporated into one package. (Drain-coupled FETs)· Reduction of the mounting area and assembly cost by one half.· Low-frequency and low-noise J-FET.Specifications Par...

floor Price/Ceiling Price

Part Number:
XN1D873
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Two elements incorporated into one package. (Drain-coupled FETs)
· Reduction of the mounting area and assembly cost by one half.
· Low-frequency and low-noise J-FET.



Specifications

Parameter Symbol Ratings Unit
Rating
of
element
Gate to drain voltage VGDO -50 V
Drain current ID 30 mA
Gate current IG 10 mA
Overall Total power dissipation PT 300 mW
Channel temperature Tch 150
Storage temperature Tstg 55 to +150



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