DescriptionThe XN06113MJ is one member of the XN06113 family. it is aSilicon NPN epitaxial planer transistor. Features of the XN06113 are:(1)Two elements incorporated into one package(Transistors with built-in resistor); (2)Reduction of the mounting area and assembly cost by one half. The absolu...
XN06113MJ: DescriptionThe XN06113MJ is one member of the XN06113 family. it is aSilicon NPN epitaxial planer transistor. Features of the XN06113 are:(1)Two elements incorporated into one package(Transistors w...
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The XN06113MJ is one member of the XN06113 family. it is aSilicon NPN epitaxial planer transistor.
Features of the XN06113 are:(1)Two elements incorporated into one package(Transistors with built-in resistor); (2)Reduction of the mounting area and assembly cost by one half.
The absolute maximum ratings of the XN06113 can be summarized as:((1)Collector to base voltage:-50V; (2)Collector to emitter voltage:-50V; (3)Collector current:-100mA; (4)Collector current:20mA; (5)Peak collector current:50mA; (6)Total power dissipation:300mW; (7)Junction temperature:150°C; (8)Storage temperature:55 to +150°C. If you want to know more information such as the electrical characteristics about the XN06113, please download the datasheet in www.seekic.com or www.chinaicmart.com.