DescriptionThe XN04210F Silicon NPN epitaxial planer transistor. Features of the XN04210F are:(1)Two elements incorporated into one package.(Transistors with built-in resistor); (2)Reduction of the mounting area and assembly cost by one half. The absolute maximum ratings of XN04210F the can be s...
XN04210F: DescriptionThe XN04210F Silicon NPN epitaxial planer transistor. Features of the XN04210F are:(1)Two elements incorporated into one package.(Transistors with built-in resistor); (2)Reduction of the...
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The XN04210F Silicon NPN epitaxial planer transistor.
Features of the XN04210F are:(1)Two elements incorporated into one package.(Transistors with built-in resistor); (2)Reduction of the mounting area and assembly cost by one half.
The absolute maximum ratings of XN04210F the can be summarized as:(1)Collector to base voltage : 50 V; (2)Collector to emitter voltage :50 V; (3)Collector current : 100 mA; (4)Total power dissipation : 300 mW; (5)Junction temperature : 150 ; (6)Storage temperature: 55 to +150 .If you want to know more information such as the electrical characteristics about the XN04210F, please download the datasheet in www.seekic.com or www.chinaicmart.com.